Cherenack, Kunigunde, Dr.

Kunigunde Cherenack received a B.SC.Eng and a M.Sc.Eng at the University of Stellebosch, South Africa. Following this she worked for a year in the Office of Nanotechnology at the US Department of Defence Research Facility, Picatinny Arsenal. She then pursued a Ph.D degree in electrial engineering at Princeton University, working in the field of flexible electronics. Her graduate research involved fabricating a-Si:H TFT backplanes on plastic substrates at 300C.

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Kunigunde joined the ETH Wearable Electronics Lab in October, 2008 as a senior research fellow. Here she is leading work package 4 (WP-4) of the Nanotera TecInTex program. This project involves the fabrication of advanced textile fibers that allow the integrationg of electronics into textiles using commercial weaving machines. Achievements to date include fabricating temperature and pressure sensors, ZnO TFTs and ring oscillators. Demonstrators have been fabricated that successfully demonstrate the integration of surface mount device (SMD) LEDs and thin-film temperature sensors into woven textile bands.

Education

Princeton University, Princeton, NJ
Ph.D. in Electronic Materials and Devices, Jan. 2009
M.A. Electrical Engineering, Nov. 2006

University of Stellenbosch, Stellenbosch, South Africa
B.Sc. Electrical Engineering, Cum Laude, December 2000
M.Sc. Electrical Engineering, Cum Laude, December 2002

Research Projects

Plastic Electronics
Link to project

Smart Textiles and Clothing
Link to project

Publications

JOURNAL PUBLICATIONS

[1] J. Z. Chen, K. H. Cherenack, C. Tsay, I-C. Cheng, and S. Wagner, ‘Effects of SiNx passivation layer and gate metal roughness on performance of a-Si:H TFTs on polyimide foil’, Electrochemical and Solid State Letters, Volume 11, No. H26, 2008
[2] B. Hekmatshoar, A. Z. Kattamis, K. H Cherenack, K. Long, J. Z. Chen, S. Wagner, J. C Sturm, K. Rajan, and M. Hack, ’Reliability of Active-Matrix Organic Light-Emitting-Diode Arrays With Amorphous Silicon Thin-Film Transistor Backplanes on Clear Plastic’, IEEE Electron Device Letters, Volume 29, Issue 1, pp. 63-66, January 2008
[3] B. Hekmatshoar, A. Z. Kattamis, K. H. Cherenack, S. Wagner, and J. C. Sturm, ’A novel TFT-OLED integration for OLED-independent pixel programming in amorphous-Si AMOLED pixels’, Journal of the Society for Information Display, Volume 16, Issue 1, pp. 183-188, January 2008
[4] J. Z. Chen, K. H Cherenack, C. Tsay, I-C. Cheng, and S. Wagner, ‘Effects of SiNx passivation layer and gate metal roughness on the performance of on-plastic a-Si:H TFTs’, Electrochemical Solid-State Letters, Volume 11, No. 2, H26-H28, 2008
[5] K. H. Cherenack, A. Z. Kattamis, B. Hekmatshoar, J. C. Sturm, and S. Wagner, ‘Amorphous silicon thin-film transistors fabricated at 300ºC on a clear plastic substrate foil’, IEEE Electron Device Letters, Volume 28, No. 11, pp. 1004-1006, November 2007
[6] A. Z. Kattamis, I-C. Cheng, K. Long, B. Hekmatshoar, K. H. Cherenack, S. Wagner, J. C. Sturm, S. M. Venugopal, D. E. Loy, S. M. O'Rourke, and D. R. Allee, ‘Amorphous Silicon Thin-Film Transistor Backplanes Depositied at 200o C on Clear Plastic for Lamination to Electrophoretic Displays’, Journal of Display Technology, Volume 3, pp. 304-309, Sept 2007
[7] A. Z. Kattamis, K. H Cherenack, B. Hekmatshoar, I-C. Cheng, H. Gleskova, J. C. Sturm, and S. Wagner, ‘Effect of SiNx Gate Dielectric Deposition Power and Temperature on a-Si:H TFT stability’, IEEE Electron Device Letters, Volume 28, Issue 7, pp. 606-608, July 2007
[8] K. H. Cherenack, A. Z. Kattamis, B. Hekmatshoar, J. C. Sturm, and S. Wagner, ‘Amorphous silicon thin-film transistors fabricated on clear plastic at 300oC ’, submitted for publication to the Journal of the Korean Physical Society (JKPS), 2008
[9] B. Hekmatshoar, K. H. Cherenack, A..Z. Kattamis, K. Long, S. Wagner, and J. C. Sturm, "Highly stable amorphous-silicon thin-film transistors on clear plastic," Applied Physics Letters, Volume 93, Issue 3, pp. 032103-1-3 July 2008

CONFERENCE PUBLICATIONS

[1] K. H. Cherenack, A. Z. Kattamis, I-C. Cheng, S. Wagner, ‘Self-aligned Amorphous Silicon Thin Film Transistors with Mobility above 1 cm2V-1s-1 fabricated at 300oC on Clear Plastic Substrates’, manuscript submitted at the MRS Spring Meeting, San Francisco, 24-28 March, 2008, paper# 1066-A20-03
[2] I-C. Cheng, K. H. Cherenack, J. Z. Chen, A. Kattamis, B. Hekmatshoar, J. C. Sturm, and S. Wagner, ‘Silicon thin-film transistor backplanes on organic polymer foils for flexible display applications’, Proc. of ISFED, II-6, pp. 31-32, International Symposium on Flexible Electronics and Displays, Hsinchu, Taiwan, Dec 2007.
[3] I-C. Cheng, H. Gleskova, J. Z. Chen, K. H. Cherenack, A. Kattamis, B. Hekmatshoar, J. C. Sturm, and S. Wagner, ‘Silicon thin-film transistors on plastic foil’, presented at 3rd Global Plastic Electronics Conference & Showcase, Symposium Hybrid Opportunities - Section 12, Frankfurt, Germany, Oct 2007.
[4] J. Z. Chen, K. H. Cherenack, C. Tsay, I-C. Cheng, and S. Wagner, ‘Effects of SiNx passivation layer and gate metal roughness on performance of a-Si:H TFTs on polyimide foil’, International conference on amorphous and nanocrystalline semiconductors (ICANS), Aug. 19-24, 2007
[5] J. C. Sturm, K. H. Cherenack, B. Hekmatshoar, A. Z. Kattamis, I-C. Cheng, J. Z. Chen, S. Wagner, S. Venugopal, D. Toy, D. E. Loy, S. M. O’Rourke, D. R. Allee, ‘Flexible Active Matrix OLED and Electrophoretic Arrays with Amorphous Silicon TFT Backplanes Processed up to 300ºC on Clear Plastic Substrates’, 2007 International Symposium, Seminar, and Exhibition, Society of Information Display, May 20-25, 2007.
[6] S. Wagner, A. Z. Kattamis, B. Hekmatshoar, K. H. Cherenack, I-C. Cheng, H. Gleskova, J. C. Sturm, ’Thin-film Transistor Backplanes on flexible polymer and steel foil substrates’, Proc.3rd Internat.TFT Conf. (ITC '07), Rome, Italy, Paper 4.1, pp 58-63, 25-26 Jan. 2007
[7] K. H. Cherenack, A. Z. Kattamis, K. Long, S. Wagner, and J. C Sturm, ‘SiNx barrier layers deposited at 250oC on a clear polymer substrate’, Mat. Res. Soc. Symp. Proc. Volume 936, paper 0936-L01-05, pp.1-5, 2006

POSTER PRESENTATIONS

[1] K. H. Cherenack, A. Kattamis, B. Hekmatshoar, J. C. Sturm and S. Wagner ‘Improving the Effective Field Effect Mobility in TFTs Fabricated at 300oC on a Clear Plastic Substrate’, second price poster award at the 7th annual United States Display Consortium Conference on Flexible Electronics, Phoenix, AZ, 21-24 Jan. 2008
[2] K. H. Cherenack, A. Z. Kattamis, I-C. Cheng, S. Wagner, ‘Back-channel passivated amorphous slicon TFTs fabricated at 300ºC on a clear plastic substrate’, poster presentation A17.3 at the Mat. Res. Soc. Spring Meeting, San Francisco, 8-13 April 2007
[3] B. Hekmatshoar, K. H. Cherenack, A. Z. Kattamis, S. Wagner and J. C. Sturm, ‘Dependence of Stability of a-Si TFT's Fabricated on Clear Plastic at 285°C on Gate Stress Voltage’, A17.1 prize-winning poster presented at the MRS Spring meeting in San Francisco, California, April 9-13, 2007
[4] K. H. Cherenack, I-C. Cheng, A. Z. Kattamis, B. Hekmatshoar, J. C. Sturm, and S. Wagner, ‘Amorphous silicon TFTs fabricated at 300ºC on a clear plastic substrate’, presented at the 6th annual United States Display Consortium Conference on Flexible Electronics, Phoenix, AZ, 6-8 Feb. 2007
[5] B.. Hekmatshoar, A.. Z. Kattamis, K. H. Cherenack, S. Wagner and J. C. Sturm, "Novel Amorphous-Si AMOLED Pixels with OLED-independent Turn-on Voltage and Driving Current," Device Research Conference, Chicago, IL, May 2007
[6] J. C. Sturm, B. Hekmatoshoar, K. H. Cherenack, A. Z. Kattamis, and S. Wagner, “Active-Matrix OLED’s with High-Lifetime Amorphous Silicon Transistors on Clear Plastic Substrates,” Mat. Res. Soc. Symp., Boston, MA, USA, Nov. 2007, Proceedings Symposium G (Volume 1030E).
[7] K. H. Cherenack, A. Z. Kattamis, I-C. Cheng, S. Wagner, ‘SiNx barrier layers deposited on a clear polymer substrate at high temperatures’, presented at the 5th annual United States Display Consortium Conference on Flexible Electronics, Phoenix, AZ, February 2006

ORAL PRESENTATIONS

[1] K. H. Cherenack, A. Z. Kattamis, B. Hekmatshoar, J. C. Sturm and S. Wagner, ‘Self-aligned Amorphous Silicon Thin Film Transistors with Mobility above 1 cm2V-1s-1 fabricated at 300oC on Clear Plastic Substrates’, talk A20.3 given at the MRS Spring Meeting, San Francisco, 24-28 March, 2008
[2] K. H. Cherenack, A. Z. Kattamis, B. Hekmatshoar, J. C. Sturm and S. Wagner, ‘Amorphous silicon thin-film transistors made on clear plastic at 300ºC’, talk 7.2 given at the 2008 6th International thin-film conference (ITC) in Seoul, South Korea, Jan 24-25, 2008
[3] K. H. Cherenack, ‘Fabricating a-Si:H TFTs at 300ºC on a Clear Plastic Substrate’, Seminar talks at ETH (Zürich), INESC (Lisbon), INM(Saarbrücken) and IMF-II(Karlsruhe), October 15-November 3, 2007
[4] K. H. Cherenack, A. Z. Kattamis, B. Hekmatshoar, I-C. Cheng, J. C. Sturm, S. Wagner, ‘Developing a 300ºC Silicon Transistor Fabrication Process on Clear Plastic Substrates for Flexible Display Backplanes’, session 6 talk 2 given at the Fifth International Symposium on Polyimides and other High Temperature Polymers, Orlando Florida, Nov 5-7, 2007
[5] K. H. Cherenack, A. Z. Kattamis, B. Hekmatshoar, I-C. Cheng, J. C. Sturm, S. Wagner, ‘Back-Channel Passivated Amorphous Silicon TFTs Fabricated at 300oC on a Clear Plastic Substrate’, talk L6 given at the TMS 2007 Electronic Materials Conference, University of Notre Dame, Indiana, June 20-22, 2007